Fundamentals of device physics and operation of the pn junction, bipolar transistor and MOSFET. Basic integrated circuit processing and application to diodes, BJTs and MOSFETs. Correlation between processing, structure, operation and modeling. Consideration of parasitic and small-geometry effects, reliability and process variation. Prerequisite(s): PLT 3003 or permission of the Department.Lectures three hours a week, problem analysis three hours alternate weeks.
Fundamentals of device physics and operation of the pn junction, bipolar transistor and MOSFET. Basic integrated circuit processing and application to diodes, BJTs and MOSFETs. Correlation between processing, structure, operation and modeling. Consideration of parasitic and small-geometry effects, reliability and process variation. Prerequisite(s): PLT 3003 or permission of the Department.Lectures three hours a week, problem analysis three hours alternate weeks.